Core-shell InGaAs/GaAs quantum well nanoneedles grown on silicon with silicon-transparent emission
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منابع مشابه
Core-shell InGaAs/GaAs quantum well nanoneedles grown on silicon with silicon-transparent emission.
In(x)Ga(1-x)As wurtzite nanoneedles are grown without catalysts on silicon substrates with x ranging from zero to 0.15 using low-temperature metalorganic chemical vapor deposition. The nanoneedles assume a 6 degrees - 9 degrees tapered shape, have sharp 2-5 nm tips, are 4 microm in length and 600 nm wide at the base. The micro-photoluminescence peaks exhibit redshifts corresponding to their inc...
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ژورنال
عنوان ژورنال: Optics Express
سال: 2009
ISSN: 1094-4087
DOI: 10.1364/oe.17.007831